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1. (WO2018125115) ACCOUNTING FOR MASK MANUFACTURING INFIDELITIES IN SEMICONDUCTOR DEVICES
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Pub. No.: WO/2018/125115 International Application No.: PCT/US2016/069103
Publication Date: 05.07.2018 International Filing Date: 29.12.2016
IPC:
G03F 1/36 (2012.01) ,G03F 1/72 (2012.01) ,G03F 1/70 (2012.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36
Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
72
Repair or correction of mask defects
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
70
Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission Boulevard Santa Clara, California 95054, US
Inventors:
GRUNES, Harsha; US
KRAUS, Michael; US
Agent:
BOOTH, Brett C.; US
Priority Data:
Title (EN) ACCOUNTING FOR MASK MANUFACTURING INFIDELITIES IN SEMICONDUCTOR DEVICES
(FR) SYSTÈME DE DISSIMULATION DES INFIDÉLITÉS DE FABRICATION DANS DES DISPOSITIFS SEMI-CONDUCTEURS
Abstract:
(EN) Accounting for predicted mask infidelities is disclosed. A computer-readable medium includes computer-readable instructions configured to instruct a processor to predict mask infidelities and workpiece infidelities resulting from the predicted mask infidelities, and produce a compensated mask design to compensate for the predicted mask and workpiece infidelities. A method includes providing a preliminary mask design, determining mask infidelities responsive to the preliminary mask design, determining workpiece infidelities responsive to the mask infidelities, and adjusting the preliminary mask design to compensate for the determined manufacturing infidelities and the determined workpiece infidelities.
(FR) Système de dissimulation des infidélités de fabrication dans des dispositifs semi-conducteurs. Support lisible par ordinateur comprenant des instructions lisibles par ordinateur configurées pour ordonner à un processeur de prédire des dissimulations d'infidélité et des infidélités d'une pièce résultant de la dissimulation d'infidélité prédite, et pour effectuer une dissimulation compensée en vue de compenser la dissimulation prédite et les infidélités de pièce. Un procédé implique de concevoir une dissimulation préliminaire, de déterminer des dissimulation d'infidélités en réponse à la conception de dissimulation préliminaire, de déterminer des infidélités de pièce en réponse à la dissimulation d'infidélités, et d'ajuster la conception de dissimulation préliminaire pour compenser les infidélités de fabrication déterminées et les infidélités de pièce déterminées.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)