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1. WO2018125112 - RELEASED GROUP IV CHANNEL BODY OVER DISTINCT GROUP IV SUB-FIN

Publication Number WO/2018/125112
Publication Date 05.07.2018
International Application No. PCT/US2016/069090
International Filing Date 29.12.2016
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 29/417 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
CPC
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
H01L 29/42392
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42384for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
42392fully surrounding the channel, e.g. gate-all-around
H01L 29/66439
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66439with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/775
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
775with one dimensional charge carrier gas channel, e.g. quantum wire FET
H01L 29/78603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78603characterised by the insulating substrate or support
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • SUNG, Seung Hoon
  • GLASS, Glenn A.
  • MURTHY, Anand S.
  • KANG, Jun Sung
  • BEATTIE, Bruce E.
  • AGRAWAL, Ashish
  • RACHMADY, Willy
  • LE, Van H.
  • CHU-KUNG, Benjamin
  • SEO, Huichan
  • KAVALIEROS, Jack T.
  • GHANI, Tahir
Agents
  • BRODSKY, Stephen I.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) RELEASED GROUP IV CHANNEL BODY OVER DISTINCT GROUP IV SUB-FIN
(FR) CORPS DE CANAL DE GROUPE IV LIBÉRÉ SUR UNE SOUS-AILETTE DE GROUPE IV DISTINCTE
Abstract
(EN)
An integrated circuit structure includes a channel body including a first group IV semiconductor material (e.g., Si1-xGex, where 0.2 ≤ x ≤ 1.0), and a sub-fin below the channel body, the sub-fin including a second group IV semiconductor material (e.g., Si) different from the first group IV semiconductor material. A gap is formed between the channel body and the sub-fin, and an intervening layer of insulator material is disposed in the gap, the intervening layer in contact with at least the top of the sub-fin. Trench isolation is in contact with lower sidewalls of the sub-fin. In some cases, the intervening layer is also in contact with upper sidewalls of the sub-fin that are not in contact with the trench isolation. The intervening layer may be provided by the gate dielectric and electrode materials, or by a distinct insulator material. Double-gate, tri-gate, and gate-all-around transistor structures are provided.
(FR)
La présente invention concerne une structure de circuit intégré qui comprend un corps de canal comprenant un premier matériau semiconducteur du groupe IV (par exemple du Si1-xGex, où 0,2 ≤ x ≤ 1,0), et une sous-ailette sous le corps de canal. La sous-ailette comprend un deuxième matériau semiconducteur du groupe IV (par exemple du Si) différent du premier matériau semi-conducteur du groupe IV. Un espace est formé entre le corps de canal et la sous-ailette, et une couche intermédiaire de matériau isolant est disposée dans l'espace. La couche intermédiaire est en contact avec au moins la partie supérieure de la sous-ailette. L'isolation de tranchée est en contact avec les parois latérales inférieures de la sous-ailette. Dans certains cas, la couche intermédiaire est également en contact avec les parois latérales supérieures de la sous-ailette qui ne sont pas en contact avec l'isolation de tranchée. La couche intermédiaire peut être produite par le diélectrique de gâchette et les matériaux d'électrode, ou par un matériau isolant distinct. Des structures de transistor à double gâchette, triple gâchette et gâchette enrobante sont réalisées.
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