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1. (WO2018125074) ASYMMETRIC TRANSISTORS AND RELATED DEVICES AND METHODS

Pub. No.:    WO/2018/125074    International Application No.:    PCT/US2016/068815
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Thu Dec 29 00:59:59 CET 2016
IPC: H01L 29/78
Applicants: INTEL CORPORATION
Inventors: LEE, Yen Chun
Title: ASYMMETRIC TRANSISTORS AND RELATED DEVICES AND METHODS
Abstract:
Asymmetric transistors and related methods and devices are disclosed. A transistor includes a semiconductor material doped with a first type of charge carriers along the gate oxide according to an asymmetric doping profile with a halo region on a source side. The transistor also includes a source including a lightly doped drain (LDD) on the source side, and a drain having a doping profile of charge carriers of a second type graded in a decreasing manner toward the source side. A method includes applying a large angle tilt implant drain (LATID) process to a drain side, a halo implant process to a source side, and applying an LDD process on the source side. A memory device includes an asymmetric transistor. A computing device includes an asymmetric transistor.