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1. WO2018125062 - MAGNETIC CONTACTS FOR SPIN QUBITS

Publication Number WO/2018/125062
Publication Date 05.07.2018
International Application No. PCT/US2016/068756
International Filing Date 27.12.2016
IPC
H01L 43/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G06N 10/00
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
10Quantum computers, i.e. computer systems based on quantum-mechanical phenomena
H01L 21/28568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28568the conductive layers comprising transition metals
H01L 21/28575
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
H01L 29/122
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
122Single quantum well structures
H01L 29/417
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • MANIPATRUNI, Sasikanth
  • PILLARISETTY, Ravi
  • NIKONOV, Dmitri E.
  • YOUNG, Ian A.
  • CLARKE, James S.
Agents
  • BURGIN, Chad R.
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MAGNETIC CONTACTS FOR SPIN QUBITS
(FR) CONTACTS MAGNÉTIQUES POUR BITS QUANTIQUES DE SPIN
Abstract
(EN)
Systems, apparatus, and methods for initializing spin qubits with no external magnetic fields are described. An apparatus for quantum computing includes a quantum well and a pair of contacts. At least one of the contacts is formed of a ferromagnetic material. One of the contacts in the pair of contacts interfaces with a semiconductor material at a first position adjacent to the quantum well and the other contact in the pair of contacts interfaces with the semiconductor material at a second position adjacent to the quantum well. The ferromagnetic material initializes an electron or hole with a spin state prior to injection into the quantum well.
(FR)
L'invention concerne des systèmes, un appareil et des procédés d'initialisation de bits quantiques de spin sans champs magnétiques externes. Un appareil de calcul quantique comprend un puits quantique et une paire de contacts. Au moins l'un des contacts est constitué d'un matériau ferromagnétique. L'un des contacts de la paire de contacts s'interface avec un matériau semi-conducteur à une première position adjacente au puits quantique et l'autre contact dans la paire de contacts s'interface avec le matériau semi-conducteur à une seconde position adjacente au puits quantique. Le matériau ferromagnétique initialise un électron ou un trou avec un état de spin avant l'injection dans le puits quantique.
Also published as
Latest bibliographic data on file with the International Bureau