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1. (WO2018125052) SELECTIVE AREA DEPOSITION OF METAL LAYERS FROM HETERO-PENTADIENYL METAL COMPLEX PRECURSORS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/125052 International Application No.: PCT/US2016/068724
Publication Date: 05.07.2018 International Filing Date: 27.12.2016
IPC:
H01L 21/768 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants: INTEL CORPORATION[US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors: MAHDI, Tayseer; US
ROMERO, Patricio E.; US
Agent: STEVENSON, Tyler A.; US
PORTNOVA, Marina; US
OVANEZIAN, Daniel E.; US
Priority Data:
Title (EN) SELECTIVE AREA DEPOSITION OF METAL LAYERS FROM HETERO-PENTADIENYL METAL COMPLEX PRECURSORS
(FR) DÉPÔT SÉLECTIF SUR CERTAINES ZONES DE COUCHES MÉTALLIQUES À PARTIR DE PRÉCURSEURS DE COMPLEXE MÉTALLIQUE D'HÉTÉRO-PENTADIÉNYLE
Abstract:
(EN) Metal layers including a metal M are selectively deposited on metal surfaces via chemical vapor deposition or atomic layer deposition from a hetero-pentadienyl metal complex precursor of formula (I), wherein L is a ligand; n is 1, 2 or 3; X is NR1, S(O)(O), S(O)(R1)(R1), S(R1)(R1), P(O)(R1), P(R1)(R1)(R1) or O; each R independently is hydrogen or a straight or branched chain C1-C6 alkyl; each R1 independently is hydrogen or a straight or branched chain C1-C6 alkyl; and M is a first row late transition metal or a platinum group metal.
(FR) Des couches métalliques comprenant un métal M sont sélectivement déposées sur des surfaces métalliques par dépôt chimique en phase vapeur ou dépôt de couche atomique à partir d'un précurseur de complexe métallique d'hétéro-pentadiényle de formule (I) où L est un ligand; n est 1, 2 ou 3; X est NR1, S(O)(O), S(O)(R1)(R1), S(R1)(R1), P(O)(R1), P(R1)(R1)(R1) ou O; chaque R représente indépendamment un atome d'hydrogène ou un alkyle en C1 à C6 à chaîne droite ou ramifiée; chaque R1 représente indépendamment un atome d'hydrogène ou un alkyle en C1 à C6 à chaîne droite ou ramifiée; et M est un métal de transition tardif de première rangée ou un métal du groupe du platine.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)