Search International and National Patent Collections

1. (WO2018125038) MONOLITHIC INTEGRATED CIRCUITS WITH MULTIPLE TYPES OF EMBEDDED NON-VOLATILE MEMORY DEVICES

Pub. No.:    WO/2018/125038    International Application No.:    PCT/US2016/068667
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Wed Dec 28 00:59:59 CET 2016
IPC: H01L 43/02
H01L 43/10
H01L 43/12
Applicants: INTEL CORPORATION
Inventors: WANG, Yih
Title: MONOLITHIC INTEGRATED CIRCUITS WITH MULTIPLE TYPES OF EMBEDDED NON-VOLATILE MEMORY DEVICES
Abstract:
Circuits are described that use metallization on both sides techniques to integrate two different types of non-volatile embedded memory devices within a single monolithic integrated circuit device. In an embodiment, a monolithic integrated circuit structure is provided that includes a device layer having one or more logic transistors. A front side interconnect layer is provided above the device layer, as seen in a vertical cross-section taken through the monolithic integrated circuit from top to bottom. A back side interconnect layer is provided below the device layer, as seen in the vertical cross-section. A first type of non-volatile memory device is provided in the front side interconnect layer, and a second type of non-volatile memory device different from the first type of non-volatile memory device is provided in the back side interconnect layer. A back side contact may be used to connect the device layer to a back side interconnect layer.