Search International and National Patent Collections

1. (WO2018125024) ONE TRANSISTOR AND ONE THREE-DIMENSIONAL FERROELECTRIC CAPACITOR MEMORY CELL

Pub. No.:    WO/2018/125024    International Application No.:    PCT/US2016/068615
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Tue Dec 27 00:59:59 CET 2016
IPC: H01L 27/11507
H01L 27/11512
Applicants: INTEL CORPORATION
Inventors: AVCI, Uygar E.
MORRIS, Daniel H.
KIM, Seiyon
YOUNG, Ian A.
Title: ONE TRANSISTOR AND ONE THREE-DIMENSIONAL FERROELECTRIC CAPACITOR MEMORY CELL
Abstract:
Described herein are ferroelectric memory cells and corresponding methods and devices. For example, in some embodiments, a ferroelectric memory cell disclosed herein includes a tri-gate or an all-around gate access transistor and a three-dimensional ferroelectric capacitor employing a thin film ferroelectric material such as e.g. hafnium zirconium oxide. The access transistor is coupled to the ferroelectric capacitor by sharing its source/drain terminal with one of the electrodes of the ferroelectric capacitor and is used for both READ and WRITE access to the ferroelectric capacitor.