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1. (WO2018125023) METHODS FOR COMBINING MASK-BASED AND MASKLESS LITHOGRAPHY

Pub. No.:    WO/2018/125023    International Application No.:    PCT/US2016/068614
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Tue Dec 27 00:59:59 CET 2016
IPC: G03F 7/20
H01L 21/027
Applicants: INTEL CORPORATION
Inventors: BRISTOL, Robert L.
LIN, Kevin L.
Title: METHODS FOR COMBINING MASK-BASED AND MASKLESS LITHOGRAPHY
Abstract:
Disclosed herein are methods for manufacturing devices by combining mask-based and maskless lithography. For example, in some embodiments, a method of forming a semiconductor device may include performing a mask-based lithographic process on a substrate having one or more layers disposed thereon to form a set of mask-based features in a first layer of the one or more layers and performing a maskless lithographic process on the substrate to form a set of maskless features. Such a method allows to benefit from the advantages of both mask-based and maskless lithographic techniques. For example, mask-based lithography may be used to form most of the features while maskless lithography may be used to modify, delete, or add a relatively small number of features. In this manner, high throughput may be achieved by employing mask-based lithography while providing the flexibility in the features allowed by the use of maskless lithography.