Search International and National Patent Collections
|1. (WO2018124705) ETCHING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BY UTILIZING SAME|
|Applicants:||SOULBRAIN CO., LTD.
|Title:||ETCHING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BY UTILIZING SAME|
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a first additive, and a solvent. The etching composition can minimize the etching rate of oxide film while selectively removing nitride film, and does not have issues that adversely affect the quality of the element, such particle generation, and is highly selective.