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1. (WO2018124705) ETCHING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BY UTILIZING SAME

Pub. No.:    WO/2018/124705    International Application No.:    PCT/KR2017/015497
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Wed Dec 27 00:59:59 CET 2017
IPC: C09K 13/06
H01L 21/306
H01L 21/3213
C09K 13/04
Applicants: SOULBRAIN CO., LTD.
솔브레인 주식회사
Inventors: PARK, Jae-Wan
박재완
LIM, Jung-Hun
임정훈
LEE, Jin-Uk
이진욱
Title: ETCHING COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT BY UTILIZING SAME
Abstract:
The present invention relates to an etching composition, and a method for producing a semiconductor element comprising an etching process that utilizes the etching composition, the etching composition comprising a first inorganic acid, a first additive, and a solvent. The etching composition can minimize the etching rate of oxide film while selectively removing nitride film, and does not have issues that adversely affect the quality of the element, such particle generation, and is highly selective.