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1. (WO2018124664) METHOD FOR TRANSFERRING MICRO ELECTRIC ELEMENT
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Pub. No.: WO/2018/124664 International Application No.: PCT/KR2017/015381
Publication Date: 05.07.2018 International Filing Date: 22.12.2017
IPC:
H01L 33/00 (2010.01) ,G03F 7/20 (2006.01) ,G03F 7/075 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
075
Silicon-containing compounds
Applicants:
주식회사 엘지화학 LG CHEM, LTD. [KR/KR]; 서울시 영등포구 여의대로 128 128, Yeoui-daero, Yeongdeungpo-gu, Seoul 07336, KR
Inventors:
이성경 LEE, Sung Kyoung; KR
손세환 SON, Se Hwan; KR
이종근 LEE, Chongkun; KR
Agent:
유미 특허법인 YOU ME PATENT AND LAW FIRM; 서울시 강남구 테헤란로 115 115 Teheran-ro Gangnam-gu Seoul 06134, KR
Priority Data:
10-2016-017949326.12.2016KR
Title (EN) METHOD FOR TRANSFERRING MICRO ELECTRIC ELEMENT
(FR) PROCÉDÉ PERMETTANT DE TRANSFÉRER UN ÉLÉMENT MICRO-ÉLECTRIQUE
(KO) 마이크로 전기 소자의 전사 방법
Abstract:
(EN) The present invention relates to a method for transferring a micro electric element, comprising the steps of: transferring a plurality of element chips, formed on one surface of a wafer, to an adhesive layer of a first adhesive film including a light transmissive substrate and the adhesive layer formed on the light transmissive substrate; selectively exposing another one surface of the adhesive layer, to which the plurality of element chips have been transferred, through the light transmissive substrate of the first adhesive film; and allowing the plurality of element chips on the first adhesive film to come in contact with an adhesive layer of a second adhesive film, which includes a light transmissive substrate and the adhesive layer formed on the light transmissive substrate, and selectively transferring the same, wherein the adhesion of a non-exposure part of the adhesive layer of the first adhesive film for the element chips is greater than the adhesion of the adhesive layer of the second adhesive film for the element chips, and the adhesion of an exposure part of the adhesive layer of the first adhesive film for the element chips is greater than the adhesion of the adhesive layer of the second adhesive film for the element chips.
(FR) La présente invention se rapporte à un procédé permettant de transférer un élément micro-électrique, comprenant les étapes consistant : à transférer une pluralité de puces d'élément, formées sur une surface d'une tranche, à une couche adhésive d'un premier film adhésif comprenant un substrat transmettant la lumière et la couche adhésive étant formée sur le substrat transmettant la lumière ; à exposer de façon sélective une autre surface de la couche adhésive, à laquelle la pluralité de puces d'élément ont été transférées, à travers le substrat transmettant la lumière du premier film adhésif ; et à permettre à la pluralité de puces d'élément sur le premier film adhésif de venir en contact avec une couche adhésive d'un second film adhésif, qui comprend un substrat transmettant la lumière et la couche adhésive étant formée sur le substrat transmettant la lumière, et à transférer de façon sélective ces dernières, l'adhérence d'une partie de non-exposition de la couche adhésive du premier film adhésif pour les puces d'élément étant supérieure à l'adhérence de la couche adhésive du second film adhésif pour les puces d'élément, et l'adhérence d'une partie d'exposition de la couche adhésive du premier film adhésif pour les puces d'élément étant supérieure à l'adhérence de la couche adhésive du second film adhésif pour les puces d'élément.
(KO) 본 발명은, 웨이퍼의 일면에 형성된 복수개의 소자칩을 광투광성 기재와 상기 광투광성 기재 상에 형성된 접착층을 포함하는 제1접착 필름의 접착층으로 전사하는 단계; 상기 제1접착 필름의 광투과성 기재를 통하여 상기 복수개의 소자칩이 전사된 접착층의 다른 일면을 선택적으로 노광하는 단계; 및 제1접착 필름 상의 복수개의 소자칩을 광투광성 기재와 상기 광투광성 기재 상에 형성된 접착층을 포함하는 제2접착 필름의 접착층과 접촉시켜 선택적으로 전사하는 단계; 를 포함하며, 상기 소자칩에 대한 상기 제 1접착 필름의 접착층의 비노광부가 갖는 접착력이 상기소자칩에 대한 상기 제 2접착 필름의 접착층의 접착력 보다 크며, 상기 소자칩에 대한 상기 제1접착 필름의 접착층의 노광부가 갖는 접착력이 상기 소자칩에 대한 상기 제2접착 필름의 접착층의 접착력 보다 작은 마이크로 전기 소자의 전사 방법에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)