Search International and National Patent Collections

1. (WO2018124641) COMPOUND SEMICONDUCTOR SOLAR CELL

Pub. No.:    WO/2018/124641    International Application No.:    PCT/KR2017/015264
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Dec 22 00:59:59 CET 2017
IPC: H01L 31/0735
H01L 31/0224
H01L 31/0216
H01L 31/02
Applicants: LG ELECTRONICS INC.
Inventors: CHOI, Wonseok
PARK, Jinhee
KIM, Soohyun
YOON, Wonki
LEE, Heonmin
Title: COMPOUND SEMICONDUCTOR SOLAR CELL
Abstract:
There is provided A compound semiconductor solar cell, comprising: a first light absorbing layer that includes gallium indium phosphide (GaInP); a first electrode positioned on a first surface of the first light absorbing layer; and a second electrode positioned on a second surface of the first light absorbing layer, wherein the first light absorbing layer includes; a first semiconductor layer that includes GaInP, that is doped as a first conductive type, a second semiconductor layer that includes aluminum gallium indium phosphide (AlGaInP), that is doped as a second conductive type, and a junction buffer layer positioned between the first semiconductor layer and the second semiconductor layer and that includes a first material comprising aluminum and a second material comprising gallium, and wherein in the junction buffer layer, a concentration of the first material on a surface in contact with the second semiconductor layer is larger than the concentration of the first material on a surface in contact with the first semiconductor layer, and a concentration of the second material on the surface in contact with the second semiconductor layer is smaller than the concentration of the second material on the surface in contact with the first semiconductor layer.