Search International and National Patent Collections

1. (WO2018124366) METHOD FOR SEPARATING EPITAXIAL LAYER BY USING CRACK PATTERN

Pub. No.:    WO/2018/124366    International Application No.:    PCT/KR2017/000636
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Jan 20 00:59:59 CET 2017
IPC: H01L 21/78
H01L 21/762
H01L 21/306
Applicants: KOREA ADVANCED NANO FAB CENTER
(재)한국나노기술원
Inventors: OH, Sewoung
오세웅
SHIN, Chan Soo
신찬수
CHOI, Je Hyuk
최재혁
LEE, Gyu Beom
이규범
PARK, Won Kyu
박원규
LEE, Tae Young
이태영
Title: METHOD FOR SEPARATING EPITAXIAL LAYER BY USING CRACK PATTERN
Abstract:
The present invention relates to a method for separating an epitaxial layer of a heterogeneous material from a semiconductor substrate and the subject matter of the present invention is a method for separating an epitaxial layer by using a crack pattern, the method comprising: a first step for forming a pattern for determining a crack array of an epitaxial layer on a semiconductor substrate; a second step for growing the epitaxial layer on the semiconductor substrate having the pattern; a third step for forming a crack array on the epitaxial layer in correspondence with the pattern; and a fourth step for allowing an etching solution to permeate into the crack array of the epitaxial layer, forming a fluid channel for providing a path, through which an etching solution can permeate into the epitaxial layer, along the crack array, and separating the epitaxial layer from the semiconductor substrate.