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1. (WO2018124109) CLEANING LIQUID COMPOSITION
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Pub. No.: WO/2018/124109 International Application No.: PCT/JP2017/046737
Publication Date: 05.07.2018 International Filing Date: 26.12.2017
IPC:
H01L 21/304 (2006.01) ,C11D 7/32 (2006.01) ,C11D 7/36 (2006.01) ,C11D 17/08 (2006.01) ,C23G 1/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
32
containing nitrogen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
36
containing phosphorus
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
17
Detergent materials or soaps characterised by their shape or physical properties
08
Liquid soap; capsuled
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
G
CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
1
Cleaning or pickling metallic material with solutions or molten salts
14
with alkaline solutions
20
Other heavy metals
Applicants:
関東化學株式会社 KANTO KAGAKU KABUSHIKI KAISHA [JP/JP]; 東京都中央区日本橋本町3丁目2番8号 2-8, Nihonbashihoncho 3-chome, Chuo-ku, Tokyo 1030023, JP
Inventors:
守田 菊恵 MORITA, Kikue; JP
高中 亞鈴治 TAKANAKA, Areji; JP
大和田 拓央 OHWADA, Takuo; JP
Agent:
葛和 清司 KUZUWA, Kiyoshi; JP
Priority Data:
2016-25431227.12.2016JP
Title (EN) CLEANING LIQUID COMPOSITION
(FR) COMPOSITION LIQUIDE DE NETTOYAGE
(JA) 洗浄液組成物
Abstract:
(EN) Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring line, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic ring are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.
(FR) La présente invention concerne une composition liquide de nettoyage qui sert au nettoyage d'un substrat ou similaire qui a été soumis à un procédé de polissage chimico-mécanique (CMP) lors des étapes de production d'un dispositif électronique tel qu'un élément semi-conducteur. Une composition liquide de nettoyage selon la présente invention est utilisée dans le but de nettoyer un substrat qui présente une ligne de câblage en Cu, et comprend un ou plusieurs composés basiques et un ou plusieurs composés aromatiques hétérocycliques monocycliques contenant de l'azote qui contiennent un ou plusieurs groupes carboxyle ou groupes ester, à condition que, dans les cas où un ou plusieurs groupes amino y sont contenus, seuls des groupes amino directement liés à un noyau hétérocyclique contenant de l'azote soient contenus. Cette composition liquide de nettoyage présente une concentration en ions hydrogène (pH) comprise entre 8 et 12.
(JA) 半導体素子などの電子デバイスの製造工程における、化学的機械研磨(CMP)処理などを施された基板などの洗浄において、有用な洗浄液組成物を提供する。 本発明の洗浄液組成物は、Cu配線を有する基板を洗浄するための洗浄液組成物であって、塩基性化合物を1種または2種以上と、カルボキシル基またはエステル基を1つ以上有する、ただしアミノ基を1つ以上有する場合は含窒素複素環に直接結合するアミノ基のみを有する、含窒素複素環式単環芳香族化合物を1種または2種以上とを含み、水素イオン濃度(pH)が8~12である、前記洗浄液組成物である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)