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1. (WO2018123969) ELECTRONIC COMPONENT DEVICE, HIGH FREQUENCY FRONT END CIRCUIT AND COMMUNICATION DEVICE
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Pub. No.: WO/2018/123969 International Application No.: PCT/JP2017/046431
Publication Date: 05.07.2018 International Filing Date: 25.12.2017
IPC:
H05K 3/46 (2006.01) ,H01F 27/02 (2006.01) ,H01L 23/12 (2006.01) ,H01L 25/10 (2006.01) ,H01L 25/11 (2006.01) ,H01L 25/18 (2006.01) ,H03H 7/01 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
46
Manufacturing multi-layer circuits
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
27
Details of transformers or inductances, in general
02
Casings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
10
the devices having separate containers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
10
the devices having separate containers
11
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7
Multiple-port networks comprising only passive electrical elements as network components
01
Frequency selective two-port networks
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
野宮 正人 NOMIYA, Masato; JP
Agent:
吉川 修一 YOSHIKAWA, Shuichi; JP
傍島 正朗 SOBAJIMA, Masaaki; JP
Priority Data:
2016-25450027.12.2016JP
Title (EN) ELECTRONIC COMPONENT DEVICE, HIGH FREQUENCY FRONT END CIRCUIT AND COMMUNICATION DEVICE
(FR) DISPOSITIF DE COMPOSANT ÉLECTRONIQUE, CIRCUIT FRONTAL HAUTE FRÉQUENCE ET DISPOSITIF DE COMMUNICATION
(JA) 電子部品装置、高周波フロントエンド回路、及び通信装置
Abstract:
(EN) This electronic component device is provided with: an electronic component (20); a resin structure (10) which internally contains the electronic component (20) so that at least one main surface of the electronic component is exposed therefrom; a through electrode (121); and a first wiring layer (32a) and a second wiring layer (32b). The electronic component (20) comprises: an element (21); an internal electrode (23) which is contained within the element (21) and is connected to the first wiring layer (32a) and the second wiring layer (32b); and an adjusting electrode (27) which is provided at least in an adjusting region (25) in the element (21). The first wiring layer (32a) is continuously provided on the internal electrode (23), the adjusting region (25) and the resin structure (10); and the thermal expansion coefficient of the resin structure (10), the thermal expansion coefficient of the adjusting region (25) and the thermal expansion coefficient of the internal electrode (23) satisfy the following relational expression. Thermal expansion coefficient of resin structure (10) ≤ Thermal expansion coefficient of adjusting region (25) ≤ Thermal expansion coefficient of internal electrode (23)
(FR) La présente invention concerne un dispositif de composant électronique qui comporte : un composant électronique (20) ; une structure en résine (10) qui contient intérieurement le composant électronique (20) de manière à ce qu'au moins une surface principale du composant électronique soit apparente à partir de celle-ci ; une électrode traversante (121) ; et une première couche de câblage (32a) et une seconde couche de câblage (32b). Le composant électronique (20) comprend : un élément (21) ; une électrode interne (23) qui est contenue à l'intérieur de l'élément (21) et est connectée à la première couche de câblage (32a) et à la seconde couche de câblage (32b) ; et une électrode de réglage (27) qui est disposée au moins dans une région de réglage (25) dans l'élément (21). La première couche de câblage (32a) est disposée de manière continue sur l'électrode interne (23), la région de réglage (25) et la structure en résine (10) ; et le coefficient de dilatation thermique de la structure en résine (10), le coefficient de dilatation thermique de la région de réglage (25) et le coefficient de dilatation thermique de l'électrode interne (23) satisfont l'expression relationnelle suivante. Coefficient de dilatation thermique de la structure en résine (10) ≤ Coefficient de dilatation thermique de la région de réglage (25) ≤ Coefficient de dilatation thermique de l'électrode interne (23)
(JA) 電子部品(20)と、一方の主面が露出する状態で電子部品(20)を内蔵する樹脂構造体(10)と、貫通電極(121)と、第1の配線層(32a)および第2の配線層(32b)とを備え、電子部品(20)は、素体(21)と、素体(21)に内蔵され第1の配線層(32a)および第2の配線層(32b)と接続された内部電極(23)と、素体(21)において少なくとも調整領域(25)に設けられた調整電極(27)と、を有し、第1の配線層(32a)は、内部電極(23)、調整領域(25)および樹脂構造体(10)の上に連続して設けられており、樹脂構造体(10)の熱膨張係数、調整領域(25)の熱膨張係数および内部電極(23)の熱膨張係数は、樹脂構造体(10)の熱膨張係数≦調整領域(25)の熱膨張係数≦内部電極(23)の熱膨張係数という関係式を満たす。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)