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1. (WO2018123939) HALFTONE MASK, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING HALFTONE MASK

Pub. No.:    WO/2018/123939    International Application No.:    PCT/JP2017/046369
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Tue Dec 26 00:59:59 CET 2017
IPC: G03F 1/32
G03F 7/40
Applicants: SK-ELECTRONICS CO., LTD.
株式会社エスケーエレクトロニクス
Inventors: YAMADA, Shingo
山田 慎吾
MORIYAMA, Kumiko
森山 久美子
MIMASAKA, Masahiro
美作 昌宏
Title: HALFTONE MASK, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING HALFTONE MASK
Abstract:
[Problem] To provide a multi-gray level halftone mask which enables the exposure of a fine photoresist pattern. [Solution] On a transparent substrate, a semi-transmitting part comprising a pattern of a semi-transmitting film and a phase shift part comprising a pattern of a phase shift film are formed, wherein the phase shift film inverts the phase of exposing light, and the transmittance of the phase shift film is lower than that of the semi-transmitting film. In addition, on a boundary part to which the semi-transmitting part and the phase shift part are adjacent, a laminated film of the semi-transmitting film, the phase shift film, and an etching stopper film is formed, wherein the etching stopper film comprises a material which is not etched by an etchant for the semi-transmitting film and an etchant for the phase shift film. Consequently, a photomask having both a halftone effect and a phase shift effect is obtained.