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1. (WO2018123905) IMAGING PANEL AND PRODUCTION METHOD FOR SAME

Pub. No.:    WO/2018/123905    International Application No.:    PCT/JP2017/046234
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Dec 23 00:59:59 CET 2017
IPC: H01L 27/146
H01L 21/336
H01L 27/144
H01L 29/786
H04N 5/369
H04N 5/374
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: MISAKI Katsunori
美崎 克紀
Title: IMAGING PANEL AND PRODUCTION METHOD FOR SAME
Abstract:
Provided are: an x-ray imaging panel that achieves improved producibility; and a production method for the same. An imaging panel 1 generates an image on the basis of scintillation light obtained from x-rays that have passed through a subject. The imaging panel 1 has, on a substrate 101, an active region and a terminal region. The active region comprises: a thin film transistor; a first insulating film that is provided above the thin film transistor; a photoelectric conversion element that is provided above the first insulating film; a second insulating film that is disposed, apart, in an upper layer of the photoelectric conversion element and has a contact hole; and a conductive film that is connected to the photoelectric conversion element via the contact hole. The photoelectric conversion element includes a photoelectric conversion layer that includes a first semiconductor layer, an intrinsic amorphous semiconductor layer, and a second semiconductor layer. The terminal region comprises: a first conductive layer 100 that is formed from the same material as a gate electrode or a source electrode for the thin film transistor; a terminal first insulating film 103 that is formed from the same material as the first insulating film, is provided, apart, above a portion of the first conductive layer 110, and has an opening; a terminal semiconductor layer 1501 that is provided above the terminal first insulating layer 103 and is formed from the same material as at least one portion of the semiconductor layers of the photoelectric conversion layer; and a second conductive layer 1702 that is provided above the terminal semiconductor layer 1501, is formed from the same material as the conductive film, and is connected to the first conductive layer 100 at the opening in the terminal first insulating film 103.