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|1. (WO2018123881) SiC WAFER AND METHOD FOR PRODUCING SiC WAFER|
|Applicants:||SHOWA DENKO K.K.
|Title:||SiC WAFER AND METHOD FOR PRODUCING SiC WAFER|
In this SiC wafer: the difference between the threading dislocation density of threading dislocations that are exposed on a first surface and the threading dislocation density of threading dislocations that are exposed on a second surface is at most 10% of the threading dislocation density on the surface having a higher threading dislocation density among the first surface and the second surface; and at least 90% of the threading dislocations exposed on the surface having the higher threading density among the first surface and the second surface extend to the surface having the lower threading dislocation density.