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1. (WO2018123881) SiC WAFER AND METHOD FOR PRODUCING SiC WAFER

Pub. No.:    WO/2018/123881    International Application No.:    PCT/JP2017/046170
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Dec 23 00:59:59 CET 2017
IPC: C30B 29/36
C30B 23/06
C30B 33/00
H01L 21/20
H01L 21/205
Applicants: SHOWA DENKO K.K.
昭和電工株式会社
DENSO CORPORATION
株式会社デンソー
Inventors: FUJIKAWA Yohei
藤川 陽平
TAKABA Hidetaka
鷹羽 秀隆
Title: SiC WAFER AND METHOD FOR PRODUCING SiC WAFER
Abstract:
In this SiC wafer: the difference between the threading dislocation density of threading dislocations that are exposed on a first surface and the threading dislocation density of threading dislocations that are exposed on a second surface is at most 10% of the threading dislocation density on the surface having a higher threading dislocation density among the first surface and the second surface; and at least 90% of the threading dislocations exposed on the surface having the higher threading density among the first surface and the second surface extend to the surface having the lower threading dislocation density.