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1. (WO2018123762) DIAMOND-BASED ELECTRICALLY CONDUCTING STRUCTURE, DIAMOND-BASED ELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING DIAMOND-BASED ELECTRICALLY CONDUCTING STRUCTURE
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Pub. No.: WO/2018/123762 International Application No.: PCT/JP2017/045703
Publication Date: 05.07.2018 International Filing Date: 20.12.2017
IPC:
H05K 3/10 (2006.01) ,C01B 32/205 (2017.01) ,H01B 1/04 (2006.01) ,H01B 5/14 (2006.01) ,H01L 21/3205 (2006.01) ,H01L 21/768 (2006.01) ,H05K 1/09 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
10
in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
[IPC code unknown for C01B 32/205]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
04
mainly consisting of carbon-silicon compounds, carbon, or silicon
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
02
Details
09
Use of materials for the metallic pattern
Applicants:
Next Innovation合同会社 NEXT INNOVATION INC. [JP/JP]; 東京都西東京市住吉町3-10-25 3-10-25, Sumiyoshicho, Nishitokyo-shi, Tokyo 2020005, JP
Inventors:
道脇 裕 MICHIWAKI Hiroshi; JP
Priority Data:
2016-25375927.12.2016JP
2017-03517527.02.2017JP
2017-23127130.11.2017JP
Title (EN) DIAMOND-BASED ELECTRICALLY CONDUCTING STRUCTURE, DIAMOND-BASED ELECTRIC COMPONENT, AND METHOD FOR MANUFACTURING DIAMOND-BASED ELECTRICALLY CONDUCTING STRUCTURE
(FR) STRUCTURE ÉLECTRIQUEMENT CONDUCTRICE À BASE DE DIAMANT, COMPOSANT ÉLECTRIQUE À BASE DE DIAMANT ET PROCÉDÉ DE FABRICATION D'UNE STRUCTURE ÉLECTRIQUEMENT CONDUCTRICE À BASE DE DIAMANT
(JA) ダイヤモンド系通電構造、ダイヤモンド系電子部品、及びダイヤモンド系通電構造の製造方法
Abstract:
(EN) [Problem] To make it possible to form an electrically conducting structure at various locations or in various members through a simple manufacturing process. [Solution] An electrically conducting structure of the present invention is provided with: a diamond-based region 20 based on diamond and/or a diamond-based material that becomes amorphous carbon; and an electrically conductive region 30 which is formed partially in the diamond-based region 20, has a higher graphite content than does the diamond-based material, and has a smaller electric resistivity than does the diamond-based material.
(FR) Le problème décrit par la présente invention est de permettre de former une structure électriquement conductrice au niveau de divers emplacements ou dans divers éléments par l'intermédiaire d'un procédé de fabrication simple. La solution selon l'invention porte sur une structure électriquement conductrice qui est pourvue : d'une région à base de diamant 20 à base de diamant et/ou d'un matériau à base de diamant qui devient du carbone amorphe; et d'une région électriquement conductrice 30 qui est formée partiellement dans la région à base de diamant 20, comporte une teneur en graphite plus élevée que celle du matériau à base de diamant, et possède une résistivité électrique inférieure à celle du matériau à base de diamant.
(JA) 【課題】簡易な製造工程で、様々な部位・部材に通電構造を形成可能にする。 【解決手段】本発明の通電構造は、ダイヤモンド及び/又はアモルファスカーボンとなるダイヤモンド系材料を主成分とするダイヤモンド系領域20と、ダイヤモンド系領域20中に部分的に形成され、上記ダイヤモンド系材料よりもグラファイトの含有比率が高く、且つ、上記ダイヤモンド系材料よりも電気抵抗率が小さい導電性領域30と、を備えるようにした。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)