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1. WO2018123757 - ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2018/123757
Publication Date 05.07.2018
International Application No. PCT/JP2017/045669
International Filing Date 20.12.2017
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
CPC
B81B 2201/0214
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
02Sensors
0214Biosensors; Chemical sensors
B81C 1/00158
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00134comprising flexible or deformable structures
00158Diaphragms, membranes
B81C 2203/075
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2203Forming microstructural systems
07Integrating an electronic processing unit with a micromechanical structure
0707Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
075the electronic processing unit being integrated into an element of the micromechanical structure
H01L 21/7624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
H01L 21/76243
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
76243using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 泉谷 淳子 IZUMITANI, Junko
Agents
  • 稲葉 良幸 INABA, Yoshiyuki
  • 大貫 敏史 ONUKI, Toshifumi
Priority Data
2016-25092126.12.2016JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 電子デバイス及びその製造方法
Abstract
(EN)
Provided is an electronic device and manufacturing method therefor which can prevent intrusion of gas or moisture from the side surface of a membrane structure. The electronic device according to an embodiment of the present invention is provided with: a plurality of layers formed on an SOI substrate comprising a support substrate, a buried insulating layer formed on the support substrate, and a silicon layer formed on the buried insulating layer; a membrane structure where the plurality of layers and SOI substrate are patterned, and that is made of sites where the support substrate is not present; and a passivation film covering an upper surface and side surface of the membrane structure.
(FR)
L'invention concerne un dispositif électronique et son procédé de fabrication qui peuvent empêcher l'intrusion de gaz ou d'humidité à partir de la surface latérale d'une structure de membrane. Le dispositif électronique selon un mode de réalisation de la présente invention comprend : une pluralité de couches formées sur un substrat SOI comprenant un substrat de support, une couche isolante enterrée formée sur le substrat de support, et une couche de silicium formée sur la couche isolante enterrée ; une structure de membrane dans laquelle la pluralité de couches et le substrat SOI sont modelés, et qui est constituée de sites où le substrat de support n'est pas présent ; et un film de passivation recouvrant une surface supérieure et une surface latérale de la structure de membrane.
(JA)
メンブレン構造の側面からのガスや水分の侵入を防止することができる、電子デバイス及びその製造方法を提供する。 本実施形態に係る電子デバイスは、支持基板と、支持基板上に形成された埋め込み絶縁層と、埋め込み絶縁層上に形成されたシリコン層と、からなるSOI基板上に形成された複数の層と、複数の層及びSOI基板がパターン形成され、かつ、支持基板がない部位により構成される、メンブレン構造と、メンブレン構造の上面及び側面を被覆するパッシベーション膜と、を備える。
Also published as
Latest bibliographic data on file with the International Bureau