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1. (WO2018123667) POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD
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Pub. No.: WO/2018/123667 International Application No.: PCT/JP2017/045204
Publication Date: 05.07.2018 International Filing Date: 15.12.2017
IPC:
C08F 220/22 (2006.01) ,C08F 212/06 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
22
Esters containing halogen
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
212
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02
Monomers containing only one unsaturated aliphatic radical
04
containing one ring
06
Hydrocarbons
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
日本ゼオン株式会社 ZEON CORPORATION [JP/JP]; 東京都千代田区丸の内一丁目6番2号 6-2, Marunouchi 1-chome, Chiyoda-ku Tokyo 1008246, JP
Inventors:
星野 学 HOSHINO Manabu; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2016-25408427.12.2016JP
Title (EN) POLYMER, POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD
(FR) POLYMÈRE, COMPOSITION DE RÉSERVE POSITIVE ET PROCÉDÉ DE FORMATION DE MOTIF DE RÉSERVE
(JA) 重合体、ポジ型レジスト組成物、及びレジストパターン形成方法
Abstract:
(EN) The purpose of the present invention is to provide a polymer capable of adequately suppressing the collapse of a resist pattern, satisfactorily forming a clear resist pattern, and furthermore improving sensitivity when used as a main chain cleavage-type positive resist. This polymer has a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). [In formula (I), R1 is an organic group having 5-7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or an alkyl group substituted by a fluorine atom; R3 is a hydrogen atom, an unsubstituted alkyl group, or an alkyl group substituted by a fluorine atom; p and q are integers of 0-5; and p + q = 5.]
(FR) La présente invention vise à fournir un polymère capable de supprimer de manière adéquate l'effondrement d'un motif de réserve, de former de manière satisfaisante un motif de réserve transparent, et en outre d'améliorer la sensibilité lorsqu'il est utilisé en tant que réserve positive de type clivage de chaîne principale. Ce polymère a une unité monomère (A) représentée par la formule générale (I) et une unité monomère (B) représentée par la formule générale (II). Dans la formule (I), R1 est un groupe organique ayant de 5 à 7 atomes de fluor. Dans la formule (II), R2 représente un atome d'hydrogène, un atome de fluor, un groupe alkyle non substitué, ou un groupe alkyle substitué par un atome de fluor ; R3 représente un atome d'hydrogène, un groupe alkyle non substitué ou un groupe alkyle substitué par un atome de fluor ; p et q sont des nombres entiers de 0 à 5; et p + q = 5].
(JA) 主鎖切断型のポジ型レジストとして使用した際に、レジストパターンの倒れの発生を十分に抑制し、明瞭なレジストパターンを良好に形成し、さらに、感度を向上させることができる重合体の提供を目的とする。本発明の重合体は、下記一般式(I)で表される単量体単位(A)と、下記一般式(II)で表される単量体単位(B)と、を有する、重合体。〔式(I)中、Rは、フッ素原子の数が5以上7以下の有機基である。式(II)中、Rは、水素原子、フッ素原子、非置換のアルキル基またはフッ素原子で置換されたアルキル基であり、Rは、水素原子、非置換のアルキル基またはフッ素原子で置換されたアルキル基であり、pおよびqは、0以上5以下の整数であり、p+q=5である。〕
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)