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1. (WO2018123652) METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Pub. No.:    WO/2018/123652    International Application No.:    PCT/JP2017/045090
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Dec 16 00:59:59 CET 2017
IPC: C30B 29/36
C30B 23/06
Applicants: SHOWA DENKO K.K.
昭和電工株式会社
Inventors: FUJIKAWA Yohei
藤川 陽平
TAKABA Hidetaka
鷹羽 秀隆
Title: METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Abstract:
This method for producing a silicon carbide single crystal is a method for producing a silicon carbide single crystal in which a single crystal of silicon carbide is grown on a silicon carbide seed crystal by using a guide member, the method comprising: a single crystal growth step for growing a silicon carbide single crystal in a manner so as not to close a gap between a side surface of the silicon carbide single crystal growing on the silicon carbide seed crystal, and an inner-side surface of the guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step for terminating crystal growth by lowering the temperature; and a gap enlargement step, between the single crystal growth step and the crystal growth termination step, for enlarging said gap by maintaining a difference, Pin-Pout, between a partial pressure Pin of Si2C in a material gas in the vicinity of an inlet of said gap and a partial pressure Pout of Si2C in the material gas in the vicinity of an outlet of said gap in a state of less than or equal to 0.18 torr.