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1. (WO2018123626) NEGATIVE RESIST COMPOSITION FOR PROTRUDING ELECTRODE AND METHOD FOR MANUFACTURING PROTRUDING ELECTRODE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2018/123626 International Application No.: PCT/JP2017/044987
Publication Date: 05.07.2018 International Filing Date: 14.12.2017
IPC:
G03F 7/004 (2006.01) ,G03F 7/20 (2006.01) ,H01L 21/60 (2006.01) ,H05K 3/34 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
30
Assembling printed circuits with electric components, e.g. with resistor
32
electrically connecting electric components or wires to printed circuits
34
by soldering
Applicants:
日本ゼオン株式会社 ZEON CORPORATION [JP/JP]; 東京都千代田区丸の内一丁目6番2号 6-2, Marunouchi 1-chome, Chiyoda-ku Tokyo 1008246, JP
Inventors:
佐藤 信寛 SATO Nobuhiro; JP
阿部 信紀 ABE Nobunori; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2016-25197526.12.2016JP
Title (EN) NEGATIVE RESIST COMPOSITION FOR PROTRUDING ELECTRODE AND METHOD FOR MANUFACTURING PROTRUDING ELECTRODE
(FR) COMPOSITION DE RÉSINE NÉGATIVE POUR ÉLECTRODE EN SAILLIE ET PROCÉDÉ DE FABRICATION D'UNE ÉLECTRODE EN SAILLIE
(JA) 突起電極用ネガ型レジスト組成物及び突起電極の製造方法
Abstract:
(EN) The present invention provides a negative resist composition for a protruding electrode with a resist film having a light transmittance of 30% or less at a wavelength of 365 nm on producing a resist film with a thickness of 3.5 µm.
(FR) La présente invention concerne une composition de résine négative pour une électrode en saillie présentant un film de résine ayant une transmittance égale ou inférieure à 30 % à une longueur d'onde de 365 nm lors de la production d'un film de résine d’une épaisseur de 3,5 µm.
(JA) 厚さ3.5μmのレジスト膜を形成した場合に、波長365nmでの前記レジスト膜の光線透過率が30%以下である、突起電極用ネガ型レジスト組成物である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)