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1. (WO2018123550) GAS FLOW SPUTTERING DEVICE, AND METHOD FOR PRODUCING SPUTTERING TARGET STARTING MATERIAL
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Pub. No.: WO/2018/123550 International Application No.: PCT/JP2017/044448
Publication Date: 05.07.2018 International Filing Date: 11.12.2017
Chapter 2 Demand Filed: 08.06.2018
IPC:
C23C 14/34 (2006.01) ,G11B 5/851 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84
Processes or apparatus specially adapted for manufacturing record carriers
851
Coating a support with a magnetic layer by sputtering
Applicants:
JX金属株式会社 JX NIPPON MINING & METALS CORPORATION [JP/JP]; 東京都千代田区大手町一丁目1番2号 1-2,Otemachi 1-chome,Chiyoda-ku, Tokyo 1008164, JP
Inventors:
小庄 孝志 KOSHO,Takashi; JP
高見 英生 TAKAMI,Hideo; JP
中村 祐一郎 NAKAMURA,Yuichiro; JP
武智 幹雄 TAKECHI,Mikio; JP
三上 智広 MIKAMI,Tomohiro; JP
Agent:
アクシス国際特許業務法人 AXIS PATENT INTERNATIONAL; 東京都港区新橋二丁目6番2号 新橋アイマークビル Shimbashi i-mark Bldg., 6-2 Shimbashi 2-Chome,Minato-ku, Tokyo 1050004, JP
Priority Data:
2016-25665728.12.2016JP
Title (EN) GAS FLOW SPUTTERING DEVICE, AND METHOD FOR PRODUCING SPUTTERING TARGET STARTING MATERIAL
(FR) DISPOSITIF DE PULVÉRISATION DE FLUX DE GAZ ET PROCÉDÉ DE PRODUCTION DE MATÉRIAU DE DÉPART DE CIBLE DE PULVÉRISATION
(JA) ガスフロースパッタリング装置及びスパッタリングターゲット原料の製造方法
Abstract:
(EN) Provided is a gas flow sputtering device suited to the long-term and stable production of a sputtering target starting material at a high sputtering rate. A gas flow sputtering device equipped with a pair of plate-shaped targets positioned in a manner such that the sputtering surfaces face one another with an interval interposed therebetween inside a sputtering chamber, a pair of cooling devices for cooling the plate-shaped targets, and a conductive securing member for securing the plate-shaped targets to the cooling devices, wherein: the pair of plate-shaped targets have attachment parts that project from the lateral surfaces thereof, and the pair of plate-shaped targets are secured to the cooling devices while satisfying a positional relationship in which the attachment parts are sandwiched between the securing member and the cooling devices; and the securing member is covered by an insulative shield member that does not contact the pair of plate-shaped targets.
(FR) L'invention concerne un dispositif de pulvérisation de flux de gaz approprié pour la production à long terme et stable d'un matériau de départ de cible de pulvérisation à une vitesse de pulvérisation élevée. L'invention concerne un dispositif de pulvérisation de flux de gaz équipé d'une paire de cibles en forme de plaque positionnées de telle sorte que les surfaces de pulvérisation se font face avec un intervalle interposé entre celles-ci à l'intérieur d'une chambre de pulvérisation, d'une paire de dispositifs de refroidissement pour refroidir les cibles en forme de plaque, et d'un élément de fixation conducteur pour fixer les cibles en forme de plaque aux dispositifs de refroidissement, la paire de cibles en forme de plaque possédant des parties d'attachement qui font saillie à partir des surfaces latérales de celles-ci, et la paire de cibles en forme de plaque étant fixée aux dispositifs de refroidissement tout en satisfaisant une relation de position dans laquelle les parties d'attachement sont intercalées entre l'élément de fixation et les dispositifs de refroidissement ; et l'élément de fixation est recouvert par un élément de blindage isolant qui n'entre pas en contact avec la paire de cibles en forme de plaque.
(JA) スパッタリングターゲット原料を長時間安定して高スパッタレートで製造するのに適したガスフロースパッタリング装置を提供する。スパッタリングチャンバー内に間隔を置いて互いのスパッタ面が対向するように配置された一対の平板ターゲットと、各平板ターゲットを冷却するための一対の冷却装置と、各平板ターゲットを冷却装置に固定するための導電性固定部材とを備えたガスフロースパッタリング装置であって、前記一対の平板ターゲットはそれぞれの側面から延出した取付部位を有しており、前記取付部位が前記固定部材と前記冷却装置によって挟まれた位置関係で前記一対の平板ターゲットがそれぞれ冷却装置に固定されており、前記固定部材は前記一対の平板ターゲットとは接触しない絶縁性シールド部材によって被覆されている、ガスフロースパッタリング装置。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)