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|1. (WO2018123549) GAS FLOW SPUTTERING DEVICE, GAS FLOW SPUTTERING TARGET, AND METHOD FOR PRODUCING SPUTTERING TARGET STARTING MATERIAL|
|Applicants:||JX NIPPON MINING & METALS CORPORATION
|Title:||GAS FLOW SPUTTERING DEVICE, GAS FLOW SPUTTERING TARGET, AND METHOD FOR PRODUCING SPUTTERING TARGET STARTING MATERIAL|
Provided is a gas flow sputtering device suited to the long-term and stable production of a sputtering target starting material at a high sputtering rate. This gas flow sputtering device is equipped with: a sputtering chamber, the interior of which can be made into a vacuum; a pair of plate-shaped targets positioned in a manner such that the sputtering surfaces face one another with an interval interposed therebetween inside the sputtering chamber; one or more gas discharge ports for supplying a sputtering gas between the pair of plate-shaped targets; an exhaust port for discharging the sputtering gas as exhaust; a member on which sputtering particles are deposited and which is positioned so as to face the gas discharge ports in a configuration where the space between the plate-shaped targets is sandwiched between said member and the gas discharge ports, which are positioned opposite said member; and an interval adjustment mechanism capable of adjusting the interval between the pair of plate-shaped targets.