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1. (WO2018123506) SiC WAFER DEFECT MEASURING METHOD, REFERENCE SAMPLE, AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

Pub. No.:    WO/2018/123506    International Application No.:    PCT/JP2017/044093
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Dec 08 00:59:59 CET 2017
IPC: H01L 21/66
C30B 29/36
Applicants: SHOWA DENKO K.K.
昭和電工株式会社
Inventors: KAMEI Koji
亀井 宏二
Title: SiC WAFER DEFECT MEASURING METHOD, REFERENCE SAMPLE, AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
Abstract:
This SiC wafer defect measuring method has a device management step for managing a defect measuring device by: irradiating a reference sample which is made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface thereof, such irradiation performed with the excitation light, prior to measuring defects of a SiC wafer, and under irradiation conditions identical to those during measuring of the SiC wafer; and measuring the S/N ratio of the pattern from the reflection image of the pattern.