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1. (WO2018123500) MAGNETIC MATERIAL SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
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Pub. No.: WO/2018/123500 International Application No.: PCT/JP2017/043990
Publication Date: 05.07.2018 International Filing Date: 07.12.2017
Chapter 2 Demand Filed: 28.08.2018
IPC:
C23C 14/34 (2006.01) ,G11B 5/851 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84
Processes or apparatus specially adapted for manufacturing record carriers
851
Coating a support with a magnetic layer by sputtering
Applicants:
JX金属株式会社 JX NIPPON MINING & METALS CORPORATION [JP/JP]; 東京都千代田区大手町一丁目1番2号 1-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 1008164, JP
Inventors:
古谷 祐樹 FURUYA Yuki; JP
Agent:
小越 一輝 OGOSHI Kazuteru; JP
小越 勇 OGOSHI Isamu; JP
若土 雅之 WAKATSUCHI Masayuki; JP
Priority Data:
2016-25559728.12.2016JP
Title (EN) MAGNETIC MATERIAL SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME
(FR) CIBLE DE PULVÉRISATION DE MATÉRIAU MAGNÉTIQUE ET PROCÉDÉ DE PRODUCTION DE LADITE CIBLE
(JA) 磁性材スパッタリングターゲット及びその製造方法
Abstract:
(EN) A magnetic material sputtering target including an oxide having a melting point of 500°C or lower, the magnetic material sputtering target being characterized in that the average number density of oxides having a particle diameter of 10 µm or greater in a sputtering surface of the sputtering target is 5/mm2 or lower. The present invention addresses the problem of providing a sputtering target and a method for manufacturing the same, whereby the generation of particles or abnormal electric discharge caused by oxides in the sputtering target, particularly coarsely grown oxides, can be reduced.
(FR) L'invention concerne une cible de pulvérisation de matériau magnétique comprenant un oxyde à point de fusion inférieur ou égal à 500 °C, la cible de pulvérisation de matériau magnétique étant caractérisée en ce que la densité de nombre moyen d'oxydes à diamètre de particule supérieur ou égal à 10 µm dans une surface de pulvérisation de la cible de pulvérisation est inférieure ou égale à 5/mm2. La présente invention porte sur une cible de pulvérisation et un procédé de production de ladite cible, permettant de réduire la génération de particules ou d'une décharge électrique anormale provoquée par des oxydes dans la cible de pulvérisation, en particulier des oxydes cultivés grossièrement.
(JA) 融点が500℃以下の酸化物を含む、磁性材スパッタリングターゲットであって、該スパッタリングターゲットのスパッタ面において、粒径が10μm以上である酸化物の平均個数密度が5個/mm以下であることを特徴とする磁性材スパッタリングターゲット。本発明は、スパッタリングターゲット中の酸化物、特に粗大に成長した酸化物に起因する異常放電やパーティクルの発生を効果的に低減することができるスパッタリングターゲット及びその製造方法を提供することを課題とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)