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1. (WO2018123380) HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT

Pub. No.:    WO/2018/123380    International Application No.:    PCT/JP2017/042209
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Nov 25 00:59:59 CET 2017
IPC: H01L 23/373
B22D 19/00
C22C 1/05
C22C 1/10
C22C 19/03
C22C 26/00
C22C 29/18
C22C 45/04
C23C 18/16
C23C 18/32
C25D 7/12
H05K 7/20
Applicants: DENKA COMPANY LIMITED
デンカ株式会社
Inventors: ISHIHARA Yosuke
石原 庸介
MIYAKAWA Takeshi
宮川 健志
OTA Hiroaki
太田 寛朗
TSUKAMOTO Hideo
塚本 秀雄
Title: HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT
Abstract:
[Problem] To provide a heat dissipation component which is for a semiconductor element, which has a high thermal conductivity and a linear expansion coefficient close to that of a semiconductor element, and which is highly reliable and highly resistant to corrosion. [Solution] The present invention has a tabular aluminum-diamond-based composite body 1 that contains a prescribed amount of a diamond powder in which the ratio of the area of a volume distribution of particles having a diameter of 1-35 μm to the area of a volume distribution of particles having a diameter of 45-205 μm ranges from 1:9 to 4:6, and in which a first peak and a second peak of the volume distribution of the particle diameter appears at 5-25 μm and at 55-195 μm, respectively, and the remaining portion being an aluminum-containing metal, wherein both principal surfaces of the composite body 1 are coated with a surface layer 4 that has a prescribed film thickness and that contains at least 80 vol% of the aluminum-containing metal, and at least two Ni-containing layers 5 are formed on the surface layer 4, the first and second layers from the surface layer 4 side are each an amorphous Ni-alloy layer having a prescribed thickness, and an Au layer 6 having a prescribed thickness is formed in the outermost layer. The amorphous Ni-alloy layer which is the first layer has a peel strength of 50 N/cm or more.