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1. (WO2018123370) SEMICONDUCTOR DEVICE
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Pub. No.: WO/2018/123370 International Application No.: PCT/JP2017/042046
Publication Date: 05.07.2018 International Filing Date: 22.11.2017
Chapter 2 Demand Filed: 23.04.2018
IPC:
H01L 23/36 (2006.01) ,H01L 23/00 (2006.01) ,H05K 7/20 (2006.01) ,H05K 9/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
7
Constructional details common to different types of electric apparatus
20
Modifications to facilitate cooling, ventilating, or heating
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
9
Screening of apparatus or components against electric or magnetic fields
Applicants:
デクセリアルズ株式会社 DEXERIALS CORPORATION [JP/JP]; 東京都品川区大崎一丁目11番2号 ゲートシティ大崎イーストタワー8階 Gate City Osaki, East Tower 8F, 1-11-2, Osaki, Shinagawa-ku Tokyo 1410032, JP
Inventors:
久村 達雄 KUMURA Tatsuo; JP
良尊 弘幸 RYOSON Hiroyuki; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
2016-25176026.12.2016JP
Title (EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract:
(EN) Provided is a semiconductor device which has excellent heat dissipation properties and excellent electromagnetic wave suppressing effect. In order to solve the above-described problem, a semiconductor device 1 according to the present invention is characterized by being provided with: a semiconductor element 30 that is formed on a substrate 50; a conductive shield can 20 that has an opening 21 and is arranged so as to cover at least a part of the semiconductor element 30, while being connected to a ground 60; a cooling member 40 that is arranged above the conductive shield can 20; and an electromagnetic wave-absorbing heat transfer sheet 10 that is formed between the semiconductor element 30 and the cooling member 40 at least through the opening 21 of the conductive shield can 20.
(FR) Cette invention concerne un dispositif à semi-conducteur qui présente d'excellentes propriétés de dissipation thermique et un excellent effet de suppression d'ondes électromagnétiques. Un dispositif à semi-conducteur (1) selon l'invention est caractérisé en ce qu'il comprend : un élément semi-conducteur (30) qui est formé sur un substrat (50) ; un blindage conducteur (20) qui présente une ouverture (21) et qui est agencé de manière à recouvrir au moins une partie de l'élément semi-conducteur (30), tout en étant relié à une masse (60) ; un élément de refroidissement (40) qui est agencé au-dessus du blindage conducteur (20) ; et une feuille de transfert thermique absorbant les ondes électromagnétiques (10) qui est formée entre l'élément semi-conducteur (30) et l'élément de refroidissement (40) au moins à travers l'ouverture (21) du blindage conducteur (20).
(JA) 優れた放熱性及び電磁波抑制効果を有する半導体装置を提供する。 上記課題を解決するべく、本発明の半導体装置1は基板50上に形成された半導体素子30と、開口部21を有し、前記半導体素子30の少なくとも一部を覆うように設けられ、グラウンド60に接続された導電シールドカン20と、該導電シールドカン20の上部に設けられた冷却部材40と、少なくとも前記導電シールドカン20の開口部21を通して、前記半導体素子30と、前記冷却部材40との間に形成された電磁波吸収熱伝導シート10と、備えることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)