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1. (WO2018123148) SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/123148    International Application No.:    PCT/JP2017/032220
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Sep 08 01:59:59 CEST 2017
IPC: H01L 21/20
C23C 16/42
H01L 21/205
H01L 21/336
H01L 29/12
H01L 29/78
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: MIYASE, Takaya
宮瀬 貴也
HORI, Tsutomu
堀 勉
WADA, Keiji
和田 圭司
ITOH, Hironori
伊東 洋典
Title: SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
This silicon carbide epitaxial substrate comprises a silicon carbide substrate and a silicon carbide epitaxial film. The silicon carbide epitaxial film is present on the silicon carbide substrate. The polytype of the silicon carbide substrate and the silicon carbide epitaxial film is 4H. The silicon carbide epitaxial film comprises a first layer that is in contact with the silicon carbide substrate and a second layer that is on the first layer and constitutes the main surface of the silicon carbide epitaxial film. The silicon carbide substrate, the first layer and the second layer contain an n-type impurity. The concentration of the n-type impurity contained in the first layer is lower than the concentration of the n-type impurity contained in the silicon carbide substrate, but is higher than the concentration of the n-type impurity contained in the second layer. The main surface of the silicon carbide substrate has a basal plane dislocation having a first area density. The main surface of the silicon carbide epitaxial film has a basal plane dislocation having a second area density that is lower than the first area density. The value obtained by dividing the second area density by the first area density is 2/10,000 or less.