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1. WO2018122866 - A UNIVERSAL SEMICONDUCTOR SWITCH

Publication Number WO/2018/122866
Publication Date 05.07.2018
International Application No. PCT/IN2017/050594
International Filing Date 15.12.2017
IPC
H01L 29/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
H01L 27/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H03K 17/00 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
CPC
H03K 17/08104
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
08Modifications for protecting switching circuit against overcurrent or overvoltage
081without feedback from the output circuit to the control circuit
08104in field-effect transistor switches
H03K 17/162
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
16Modifications for eliminating interference voltages or currents
161in field-effect transistor switches
162without feedback from the output circuit to the control circuit
H03K 17/567
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
H03K 17/60
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
60the devices being bipolar transistors
H03K 17/687
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
H03K 17/7955
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
78using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
795controlling bipolar transistors
7955using phototransistors
Applicants
  • CENTUM ELECTRONICS LIMITED [IN]/[IN]
Inventors
  • SINGH, Bhoopendrakumar
  • P K, Praveen
  • CHIPPALKATTI, Vinod
  • T, Kanthimathinathan
  • BHAT, Aravind
Agents
  • BHATTA, Narendra Hosakere Lakshminarayana
Priority Data
20164104519431.12.2016IN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A UNIVERSAL SEMICONDUCTOR SWITCH
(FR) COMMUTATEUR À SEMI-CONDUCTEUR UNIVERSEL
Abstract
(EN)
The invention provides a universal semiconductor switch. The universal semiconductor switch includes a switching arrangement having an input and an output, at least one trigger circuit operably coupled to the switching arrangement and a noise immunity circuit coupled to the trigger circuit.
(FR)
L'invention concerne un commutateur à semi-conducteur universel. Le commutateur à semi-conducteur universel comprend un agencement de commutation ayant une entrée et une sortie, au moins un circuit de déclenchement couplé de manière fonctionnelle à l'agencement de commutation et un circuit d'immunité au bruit couplé au circuit de déclenchement.
Also published as
Latest bibliographic data on file with the International Bureau