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1. (WO2018122659) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/122659    International Application No.:    PCT/IB2017/057921
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Dec 15 00:59:59 CET 2017
IPC: H01L 29/786
H01L 21/82
H01L 21/8242
H01L 27/10
H01L 27/108
Applicants: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventors: YAMAZAKI, Shunpei
HIRAMATSU, Tomoki
HONDA, Ryunosuke
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device with a high on-state current is provided. The semiconductor device includes a first conductor over a substrate, a first insulator over the first conductor, a first oxide over the first insulator, a second oxide over the first oxide, a second insulator in contact with top and side surfaces of the second oxide, a second conductor over the second insulator, and a third insulator in contact with side surfaces of the second insulator and the second conductor. The thickness of the second oxide is greater than or equal to the length of the second oxide in a channel width direction. The second conductor has a region facing the top and side surfaces of the second oxide with the second insulator positioned therebetween. The carrier density of the side surface of the second oxide is higher than that of the top surface of the second oxide.