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1. (WO2018122612) ZIRCONIUM, HAFNIUM, TITANIUM PRECURSORS AND DEPOSITION OF GROUP 4 CONTAINING FILMS USING THE SAME

Pub. No.:    WO/2018/122612    International Application No.:    PCT/IB2017/001739
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Dec 30 00:59:59 CET 2017
IPC: H01L 21/316
C23C 16/18
H01L 21/31
Applicants: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
KIM, Daehyeon
GATINEAU, Satoko
NOH, Wontae
GATINEAU, Julien
GIRARD, Jean-marc
Inventors: KIM, Daehyeon
GATINEAU, Satoko
NOH, Wontae
GATINEAU, Julien
GIRARD, Jean-marc
Title: ZIRCONIUM, HAFNIUM, TITANIUM PRECURSORS AND DEPOSITION OF GROUP 4 CONTAINING FILMS USING THE SAME
Abstract:
Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L2-M-(R)C5R3-[(ER2)2-NR]-, wherein M is Ti, Zr, or Hf bonded in an η5 bonding mode to the Cp group; each E is independently C, Si, B or P; each R is independently a hydrogen or a C1-C4 hydrocarbon group; and each L is independently a -1 anionic ligand selected from the group consisting of NR' 2, OR', Cp, amidinate, β-diketonate, or keto-iminate, wherein R' is a H or a C1-C4 hydrocarbon group and adjacent R' s may be joined to form a hydrocarbyl ring; provided that at least one R on the Cp is C1 to C4. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.