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1. (WO2018122103) SEMICONDUCTOR LASER DIODE

Pub. No.:    WO/2018/122103    International Application No.:    PCT/EP2017/084144
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Dec 22 00:59:59 CET 2017
IPC: H01S 5/042
H01S 5/22
H01S 5/323
Applicants: OSRAM OPTO SEMICONDUCTORS GMBH
Inventors: GERHARD, Sven
EICHLER, Christoph
LELL, Alfred
STOJETZ, Bernhard
Title: SEMICONDUCTOR LASER DIODE
Abstract:
A semiconductor laser diode (100) is specified having a semiconductor layer sequence (2) with an active layer (3) which has a main plane of extent and which is configured to generate light (8) during operation in an active region (5), and to irradiate light (8) via a light exit face (6), wherein the active region (5) extends from a rear side face (7), lying opposite the light exit face (6), to the light exit face (6) along a longitudinal direction (93) in the main plane of extent, wherein the semiconductor layer sequence (2) has a surface region (20), on which a coherent contact structure (4) is applied in direct contact, wherein the contact structure (4) in at least a first contact region (241) has a first electrical contact material (41) in direct contact with the surface region (20), and in at least a second contact region (242) has a second electrical contact material (42) in direct contact with the surface region (20), and wherein the first and second contact regions (241, 242) adjoin one another.