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1. (WO2018121965) SIMULATION-ASSISTED ALIGNMENT BETWEEN METROLOGY IMAGE AND DESIGN
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Pub. No.: WO/2018/121965 International Application No.: PCT/EP2017/081695
Publication Date: 05.07.2018 International Filing Date: 06.12.2017
IPC:
G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
ASML NETHERLANDS B.V. [NL/NL]; P.O. Box 324 5500 AH Veldhoven, NL
Inventors:
WANG, Te-Sheng; US
Agent:
PETERS, John; NL
Priority Data:
62/439,69028.12.2016US
Title (EN) SIMULATION-ASSISTED ALIGNMENT BETWEEN METROLOGY IMAGE AND DESIGN
(FR) ALIGNEMENT ASSISTÉ PAR SIMULATION ENTRE UNE IMAGE DE MÉTROLOGIE ET UNE CONCEPTION
Abstract:
(EN) A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.
(FR) L'invention concerne un procédé consistant : à simuler une image ou des caractéristiques de celle-ci, à l'aide des caractéristiques d'une configuration de conception et d'un processus de formation de motif, à déterminer des écarts entre l'image ou les caractéristiques de celle-ci et la configuration de conception ou des caractéristiques de celle-ci ; à aligner une image de métrologie obtenue à partir d'un substrat à motif et la configuration de conception sur la base des écarts, le substrat à motif comprenant un motif produit à partir de la configuration de conception à l'aide du processus de formation de motif ; et à déterminer un paramètre d'un substrat à motif à partir de l'image de métrologie alignée avec la configuration de conception.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)