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1. (WO2018121611) GROUP III-V NITRIDE SEMICONDUCTOR-BASED LED FULL COLOR DISPLAY DEVICE STRUCTURE AND PREPARING METHOD

Pub. No.:    WO/2018/121611    International Application No.:    PCT/CN2017/119025
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Thu Dec 28 00:59:59 CET 2017
IPC: H01L 27/12
Applicants: ZHANG, Xijuan
张希娟
Inventors: ZHANG, Xijuan
张希娟
Title: GROUP III-V NITRIDE SEMICONDUCTOR-BASED LED FULL COLOR DISPLAY DEVICE STRUCTURE AND PREPARING METHOD
Abstract:
A group III-V nitride semiconductor-based LED full color display device structure and a preparing method. The structure comprises: an active-matrix-driven silicon-based backplane (1), comprising several driving units (11); an LED micropixel array, located on the surface of the active-matrix-driven silicon-based backplane (1), and comprising several LED micropixels (2), each of the LED micropixels comprising a light emitting material layer (21) and an anode (22), the anode (22) of the LED micropixel (22) connecting to the anode (22) of the driving unit (11) corresponding thereto, and the light emitting material layer (21) being located on the surface of the anode (22) of the LED micropixel (22); a first conductive type of group III-V nitride layer (3), located on the surface of the light emitting material layer (21) of each LED micropixel and connecting the LED micropixels (2); and a color conversion film (4) needed by color display, located on the surface of the first conductive type of group III-V nitride layer (3). Each LED micropixel (2) and each color conversion film (4) are connected by means of the first conductive type of group III-V nitride layer (3) having a very small thickness, not only shortening the spacing between adjacent LED micropixels (2) to improve resolution, but also reducing crosstalk between adjacent color conversion films.