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1. (WO2018121219) HEAT DISSIPATION SUBSTRATE, PREPARATION METHOD AND APPLICATION THEREOF, AND ELECTRONIC COMPONENT
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Pub. No.: WO/2018/121219 International Application No.: PCT/CN2017/115153
Publication Date: 05.07.2018 International Filing Date: 08.12.2017
IPC:
H01L 23/367 (2006.01) ,H01L 23/48 (2006.01) ,H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
367
Cooling facilitated by shape of device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
比亚迪股份有限公司 BYD COMPANY LIMITED [CN/CN]; 中国广东省深圳市 坪山新区比亚迪路3009号 No. 3009, BYD Road, Pingshan Shenzen, Guangdong 518118, CN
Inventors:
连俊兰 LIAN, Junlan; CN
林宏业 LIN, Hongye; CN
Agent:
北京清亦华知识产权代理事务所(普通合伙) TSINGYIHUA INTELLECTUAL PROPERTY LLC; 中国北京市 海淀区清华园清华大学照澜院商业楼301室 Room 301 Trade Building, Zhaolanyuan Tsinghua University, Qinghuayuan, Haidian District Beijing 100084, CN
Priority Data:
201611249692.929.12.2016CN
Title (EN) HEAT DISSIPATION SUBSTRATE, PREPARATION METHOD AND APPLICATION THEREOF, AND ELECTRONIC COMPONENT
(FR) SUBSTRAT DE DISSIPATION DE CHALEUR, SON PROCÉDÉ DE PRÉPARATION ET SON APPLICATION, ET COMPOSANT ÉLECTRONIQUE
(ZH) 散热基板及其制备方法和应用以及电子元器件
Abstract:
(EN) Provided are a heat dissipation substrate, a preparation method and an application thereof, and an electronic component. The heat dissipation substrate comprises: a metal-ceramic composite panel (1), the metal-ceramic composite panel (1) being a metal layer coating a ceramic body; a metal oxide layer (2) which is integrated with the metal layer is formed on an external surface of the metal layer; and an electrically conductive layer (3), which is formed on at least a partial external surface of the metal oxide layer (2), the electrically conductive layer (3) forming an electrically conductive circuit which is used for connecting and bearing a chip.
(FR) L'invention concerne un substrat de dissipation de chaleur, son procédé de préparation et son application, et un composant électronique. Le substrat de dissipation de chaleur comprend : un panneau composite métal-céramique (1), le panneau composite métal-céramique (1) étant une couche métallique revêtant un corps en céramique ; une couche d'oxyde métallique (2) qui est intégrée à la couche métallique est formée sur une surface externe de la couche métallique ; et une couche électroconductrice (3), qui est formée sur au moins une surface externe partielle de la couche d'oxyde métallique (2), la couche électroconductrice (3) formant un circuit électroconducteur qui est utilisé pour connecter et supporter une puce.
(ZH) 提供了一种散热基板及其制备方法和应用以及电子元器件。该散热基板包括:金属-陶瓷复合板(1),所述金属-陶瓷复合板(1)为金属层包覆陶瓷体;在所述金属层的外表面上形成有与所述金属层成为一体的金属氧化层(2);以及在所述金属氧化层(2)的至少部分外表面上形成的导电层(3),所述导电层(3)形成有导电线路,用于连结和承载芯片。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)