Search International and National Patent Collections

1. (WO2018121132) LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2018/121132    International Application No.:    PCT/CN2017/112313
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Thu Nov 23 00:59:59 CET 2017
IPC: H01L 29/78
H01L 29/06
H01L 21/336
Applicants: CSMC TECHNOLOGIES FAB2 CO.,LTD.
无锡华润上华科技有限公司
Inventors: ZHANG, Guangsheng
张广胜
ZHANG, Sen
张森
HU, Xiaolong
胡小龙
Title: LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME
Abstract:
Provided are a Lateral Double-diffused MOS (LDMOS) device and a method for manufacturing same. A LOMOS device comprising a substrate (10), a drift region (20) located on the substrate (10), a source zone (201) and a drain zone (220) provided in the drift region (20), and a trench (110) surrounding the drift region (20), with the depth of the trench (110) being greater than that of the drift region (20).