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|1. (WO2018121132) LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME|
|Applicants:||CSMC TECHNOLOGIES FAB2 CO.,LTD.
|Title:||LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME|
Provided are a Lateral Double-diffused MOS (LDMOS) device and a method for manufacturing same. A LOMOS device comprising a substrate (10), a drift region (20) located on the substrate (10), a source zone (201) and a drain zone (220) provided in the drift region (20), and a trench (110) surrounding the drift region (20), with the depth of the trench (110) being greater than that of the drift region (20).