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1. (WO2018121109) FLASH STORAGE STRUCTURE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2018/121109 International Application No.: PCT/CN2017/110888
Publication Date: 05.07.2018 International Filing Date: 14.11.2017
IPC:
H01L 29/788 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
788
with floating gate
Applicants:
无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN/CN]; 中国江苏省无锡市 新区新洲路8号 No.8 Xinzhou Road, New District Wuxi, Jiangsu 214028, CN
Inventors:
梁志彬 LIANG, Zhibin; CN
刘涛 LIU, Tao; CN
张松 ZHANG, Song; CN
金炎 JIN, Yan; CN
王德进 WANG, Dejin; CN
Agent:
广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE; 中国广东省广州市天河区珠江东路6号4501房 (部位:自编01-03和08-12单元)(仅限办公用途) Room 4501, No. 6 Zhujiang East Road, Tianhe District, Guangzhou Guangdong 510623, CN
Priority Data:
201611249146.529.12.2016CN
Title (EN) FLASH STORAGE STRUCTURE AND MANUFACTURING METHOD THEREFOR
(FR) STRUCTURE DE STOCKAGE FLASH ET SON PROCÉDÉ DE PRODUCTION
(ZH) 闪存存储结构及其制造方法
Abstract:
(EN) A flash storage structure and a manufacturing method therefor. The method comprises: depositing a polysilicon layer on a substrate structure (S110); forming, using the polysilicon layer, a floating gate and a field oxide structure covering the floating gate (S120); forming a protective side wall at the corner of the bottom of the floating gate (S130); forming a tunneling oxide layer on the field oxide structure and the floating gate (S140); and forming a control gate on the tunneling oxide layer (S150).
(FR) L'invention concerne une structure de stockage flash et son procédé de fabrication. Le procédé comprend : le dépôt d'une couche de polysilicium sur une structure de substrat (S110) ; la formation, à l'aide de la couche de polysilicium, d'une grille flottante et d'une structure d'oxyde de champ couvrant la grille flottante (S120) ; la formation d'une paroi latérale de protection au niveau du coin du bas de la grille flottante (S130) ; la formation d'une couche d'oxyde à effet tunnel sur la structure d'oxyde de champ et la grille flottante (S140) ; et la formation d'une grille de commande sur la couche d'oxyde à effet tunnel (S150).
(ZH) 一种闪存存储结构及其制造方法。该方法包括:在衬底结构上淀积多晶硅层(S110);利用所述多晶硅层形成浮栅和覆盖在浮栅上的场氧结构(S120);在所述浮栅底部的边角处形成保护侧墙(S130);在场氧结构及浮栅上形成隧穿氧化层(S140);在所述隧穿氧化层上形成控制栅(S150)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)