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1. (WO2018120811) CHEMICAL-MECHANICAL POLISHING SOLUTION AND APPLICATION THEREOF

Pub. No.:    WO/2018/120811    International Application No.:    PCT/CN2017/094322
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Wed Jul 26 01:59:59 CEST 2017
IPC: C09G 1/02
H01L 21/304
H01L 21/321
H01L 21/3105
Applicants: ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
安集微电子科技(上海)股份有限公司
Inventors: YANG, Junya
杨俊雅
JING, Jianfen
荆建芬
ZHANG, Jian
张建
SONG, Kai
宋凯
CAI, Xinyuan
蔡鑫元
YAO, Ying
姚颖
PAN, Yijun
潘依君
DU, Lingxi
杜玲曦
WANG, Chunmei
王春梅
Title: CHEMICAL-MECHANICAL POLISHING SOLUTION AND APPLICATION THEREOF
Abstract:
A chemical-mechanical polishing solution, comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, and at least one sulphonate anionic surfactant. The polishing solution can be used for polishing copper metal. The present invention improves the effect of the polishing solution on the polishing selection ratio of copper to a tantalum barrier layer and, when used for polishing wafers, can improve dielectric layer corrosion and dishing of polished copper wire, without defects such as copper residue and corrosion after polishing.