Search International and National Patent Collections
|1. (WO2018120811) CHEMICAL-MECHANICAL POLISHING SOLUTION AND APPLICATION THEREOF|
|Applicants:||ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
|Title:||CHEMICAL-MECHANICAL POLISHING SOLUTION AND APPLICATION THEREOF|
A chemical-mechanical polishing solution, comprising abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, and at least one sulphonate anionic surfactant. The polishing solution can be used for polishing copper metal. The present invention improves the effect of the polishing solution on the polishing selection ratio of copper to a tantalum barrier layer and, when used for polishing wafers, can improve dielectric layer corrosion and dishing of polished copper wire, without defects such as copper residue and corrosion after polishing.