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1. (WO2018120517) ALLOY NANOMATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/120517    International Application No.:    PCT/CN2017/080622
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Apr 15 01:59:59 CEST 2017
IPC: H01L 33/28
H01L 33/18
Applicants: TCL CORPORATION
TCL集团股份有限公司
Inventors: YANG, Yixing
杨一行
LIU, Zheng
刘政
QIAN, Lei
钱磊
Title: ALLOY NANOMATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
Abstract:
An alloy nanomaterial, a preparation method therefor, and a semiconductor device. The alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 is a gradient alloy component structure in which the energy level width increases from inside out in the radial direction, and type A2 is a gradient alloy component structure in which the energy level width decreases from inside out in the radial direction. In the alloy nanomaterial, the distribution of the alloy nanostructured units is: the alloy nanostructured units of type A1 and the alloy nanostructured units of type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The alloy nanomaterial not only achieves higher luminous efficiency, but also satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for an alloy nanomaterial, and is an ideal material applicable to the QLED and the display technology.