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1. (WO2018119987) DUAL IN-LINE MEMORY MODULES AND CONNECTORS FOR INCREASED SYSTEM PERFORMANCE

Pub. No.:    WO/2018/119987    International Application No.:    PCT/CN2016/113388
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Sat Dec 31 00:59:59 CET 2016
IPC: G06F 1/16
Applicants: INTEL CORPORATION
HUANG, Yi
Inventors: HUANG, Yi
Title: DUAL IN-LINE MEMORY MODULES AND CONNECTORS FOR INCREASED SYSTEM PERFORMANCE
Abstract:
A dual in-line memory module (DIMM) and connector are described. The DIMM may include a substrate including first and second sides and a plurality of memory chips on at least one of the sides. The first and second sides each include an end region configured to engage a connector. The DIMM may include a plurality of rows of electrical contacts positioned in the end region on the first side of the substrate, the plurality of rows including a first side first row of electrical contacts and a first side second row of electrical contacts. The DIMM may include a plurality of rows of electrical contacts positioned in the end region on the second side of the substrate, the plurality of rows including a second side first row of electrical contacts and a second side second row of electrical contacts. Other embodiments are described and claimed.