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1. (WO2018119865) LOW-TEMPERATURE POLYSILICON ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

Pub. No.:    WO/2018/119865    International Application No.:    PCT/CN2016/112989
Publication Date: Fri Jul 06 01:59:59 CEST 2018 International Filing Date: Fri Dec 30 00:59:59 CET 2016
IPC: H01L 21/77
H01L 27/12
H01L 21/336
Applicants: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
武汉华星光电技术有限公司
Inventors: GUO, Yuan
郭远
Title: LOW-TEMPERATURE POLYSILICON ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
Abstract:
A low-temperature polysilicon array substrate and manufacturing method thereof. The method comprises: forming, sequentially and on a glass substrate, a mask layer, a buffer layer, and a polysilicon island; performing channel doping on an NMOS region of the polysilicon island; performing light P- doping on two ends of a PMOS region of the polysilicon island; and then performing heavy N+ doping; forming a gate isolation layer and a gate electrode layer; and performing light N- doping and heavy P+ doping.