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1. (WO2018108006) METHOD FOR REDUCING SILICON CARBIDE EPITAXIAL BASAL PLANE DISLOCATION DENSITY

Pub. No.:    WO/2018/108006    International Application No.:    PCT/CN2017/114686
Publication Date: Fri Jun 22 01:59:59 CEST 2018 International Filing Date: Thu Dec 07 00:59:59 CET 2017
IPC: H01L 21/02
H01L 21/3065
Applicants: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 RESEARCH INSTITUTE
中国电子科技集团公司第五十五研究所
Inventors: LI, Yun
李赟
Title: METHOD FOR REDUCING SILICON CARBIDE EPITAXIAL BASAL PLANE DISLOCATION DENSITY
Abstract:
A method for reducing silicon carbide epitaxial basal plane dislocation density, primarily comprising epitaxial growth of a composite buffer layer of multiple cycles of high-to-low doping concentration on an SiC substrate, performing interface high-temperature hydrogen etching processing on each single buffer layer, using interface high-temperature processing and doping induction to introduce a plurality of interfaces, and using interface image force to facilitate the conversion of BPD defects to TED defects. The present method greatly reduces BPD defects in an epitaxial layer, effectively reducing the density of BPD defects in the epitaxial layer; the method is simple, facilitates the integration of epitaxial processing, and avoids complex preprocessing of the SiC substrate, reducing damage to the surface of the substrate.