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|1. (WO2018107375) SEMICONDUCTOR MANUFACTURING METHOD AND DEVICE THEREFOR|
|Applicants:||HUAWEI TECHNOLOGIES CO., LTD.
|Title:||SEMICONDUCTOR MANUFACTURING METHOD AND DEVICE THEREFOR|
Disclosed are a semiconductor manufacturing method and a device therefor, which are used for manufacturing a tunnelling field-effect transistor. The method in the embodiments of the present invention comprises: determining a position of a first pole on a surface of the tunnelling field-effect transistor substrate by using a photolithography technology, wherein the first pole is a source or a drain; manufacturing a spindle structure at the position of the first pole, wherein the spindle structure comprises a polysilicon layer and a nitride layer, and the polysilicon layer is in contact with the surface of the tunnelling field-effect transistor substrate; manufacturing a nitride sidewall of the polysilicon layer, so that the surface of the polysilicon layer is sealed on the surface of the tunnelling field-effect transistor substrate, the nitride sidewall and the nitride layer; and determining a region, other than the spindle structure and the silicon nitride sidewall, on the surface of the tunnelling field-effect transistor substrate to be a position of a second pole, wherein the second pole is a drain or a source, and the second pole is different from the first pole.