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1. (WO2018107222) SILICON CARBIDE SCHOTTKY DIODES

Pub. No.:    WO/2018/107222    International Application No.:    PCT/AU2017/051377
Publication Date: Fri Jun 22 01:59:59 CEST 2018 International Filing Date: Thu Dec 14 00:59:59 CET 2017
IPC: H01L 29/872
Applicants: GRIFFITH UNIVERSITY
Inventors: DIMITRIJEV, Sima
HAN, Jisheng
Title: SILICON CARBIDE SCHOTTKY DIODES
Abstract:
A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.