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1. (WO2018107138) SHORT INORGANIC TRISILYLAMINE-BASED POLYSILAZANES FOR THIN FILM DEPOSITION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/107138 International Application No.: PCT/US2017/065506
Publication Date: 14.06.2018 International Filing Date: 11.12.2017
IPC:
C23C 16/34 (2006.01) ,H01L 21/316 (2006.01) ,H01L 21/318 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34
Nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
Applicants:
SANCHEZ, Antonio [ES/JP]; JP (US)
ITOV, Gennadiy [US/US]; US (US)
PESARESI, Reno [US/US]; US (US)
GIRARD, Jean-Marc [FR/FR]; FR (US)
ZHANG, Peng [US/US]; US (US)
KHANDELWAL, Manish [IN/US]; US (US)
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR/FR]; 75, quai d'Orsay 75007 Paris, FR
AIR LIQUIDE ADVANCED MATERIALS LLC [US/US]; 3121 Route 22 East, Suite 200 Branchburg, New Jersey 08876, US (US)
AIR LIQUIDE ADVANCED MATERIALS, INC. [US/US]; 3121 Route 22 East, Suite 200 Branchburg, New Jersey 08876, US (US)
Inventors:
SANCHEZ, Antonio; JP
ITOV, Gennadiy; US
PESARESI, Reno; US
GIRARD, Jean-Marc; FR
ZHANG, Peng; US
KHANDELWAL, Manish; US
Priority Data:
15/661,57627.07.2017US
62/432,66611.12.2016US
Title (EN) SHORT INORGANIC TRISILYLAMINE-BASED POLYSILAZANES FOR THIN FILM DEPOSITION
(FR) POLYSILAZANES À BASE DE TRISILYLAMINE INORGANIQUE COURTE POUR DÉPÔT DE COUCHES MINCES
Abstract:
(EN) Disclosed are Si-C free and volatile silazane precursors for high purity thin film deposition.
(FR) L'invention concerne des précurseurs de silazane volatils et exempts de Si-C pour un dépôt de couches minces de haute pureté.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)