Search International and National Patent Collections
|1. (WO2018106955) THERMAL ATOMIC LAYER ETCHING PROCESSES|
|Applicants:||ASM IP HOLDING B.V.
ASM AMERICA, INC.
|Inventors:||BLOMBERG, Tom, E.
TUOMINEN, Marko, J.
HAUKKA, Suvi, P.
|Title:||THERMAL ATOMIC LAYER ETCHING PROCESSES|
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.