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1. (WO2018106955) THERMAL ATOMIC LAYER ETCHING PROCESSES

Pub. No.:    WO/2018/106955    International Application No.:    PCT/US2017/065170
Publication Date: Fri Jun 15 01:59:59 CEST 2018 International Filing Date: Fri Dec 08 00:59:59 CET 2017
IPC: H01L 21/3065
H01L 29/20
H01J 37/32
H01L 21/306
Applicants: ASM IP HOLDING B.V.
ASM AMERICA, INC.
Inventors: BLOMBERG, Tom, E.
ZHU, Chiyu
TUOMINEN, Marko, J.
HAUKKA, Suvi, P.
SHARMA, Varun
Title: THERMAL ATOMIC LAYER ETCHING PROCESSES
Abstract:
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.