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1. (WO2018106902) PATTERNED METALLIZATION FOR HYBRID METAL-SEMICONDUCTOR MIRROR OF HIGH REFLECTIVITY
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Pub. No.: WO/2018/106902 International Application No.: PCT/US2017/065087
Publication Date: 14.06.2018 International Filing Date: 07.12.2017
IPC:
H01L 33/10 (2010.01) ,H01S 3/08 (2006.01) ,H01S 3/081 (2006.01) ,H01S 5/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
05
Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08
Construction or shape of optical resonators or components thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
05
Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
08
Construction or shape of optical resonators or components thereof
081
comprising more than two reflectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
Applicants: ARIZONA BOARD OF REGENTS on behalf of THE UNIVERSITY OF ARIZONA[US/US]; 220 West Sixth Street 4th Floor Tucson, AZ 85701, US
Inventors: LAURAIN, Alexandre; US
MOLONEY, Jerome, V.; US
GBELE, Patrick, Kokou; US
Agent: LAMIQUIZ, Jiarong, L.; US
Priority Data:
62/431,34307.12.2016US
Title (EN) PATTERNED METALLIZATION FOR HYBRID METAL-SEMICONDUCTOR MIRROR OF HIGH REFLECTIVITY
(FR) MÉTALLISATION À MOTIFS POUR MIROIR HYBRIDE MÉTAL-SEMI-CONDUCTEUR À HAUTE RÉFLECTIVITÉ
Abstract:
(EN) A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.
(FR) L'invention concerne un réflecteur pour des dispositifs optiques. Le réflecteur comprend un réflecteur Bragg réparti et un réflecteur métallique. Le réflecteur métallique est contenu dans une ou plusieurs ouvertures définies par un matériau ayant une bonne adhérence à un matériau semi-conducteur. L'invention concerne également un procédé de liaison de la structure résultante à un dissipateur thermique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)