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1. (WO2018106665) MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
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Pub. No.: WO/2018/106665 International Application No.: PCT/US2017/064669
Publication Date: 14.06.2018 International Filing Date: 05.12.2017
IPC:
H01L 43/12 (2006.01) ,H01L 27/22 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22
including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects
Applicants:
EVERSPIN TECHNOLOGIES, INC. [US/US]; 5670 West Chandler Blvd. Suite 100 Chandler, AZ 85226, US
Inventors:
AGGARWAL, Sanjeev; US
DESHPANDE, Sarin A.; US
SLAUGHTER, Jon; US
Agent:
CHANDRAN, Biju; US
Priority Data:
15/831,73605.12.2017US
62/430,59606.12.2016US
Title (EN) MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
(FR) DISPOSITIFS À MAGNÉTORÉSISTANCE ET PROCÉDÉS ASSOCIÉS
Abstract:
(EN) The present disclosure is directed to exemplary methods of manufacturing a magnetoresistive device. In one aspect, a method may include forming one or more regions (10, 20, 30...) of a magnetoresistive stack (100) on a substrate (90), wherein the substrate includes at least one electronic device. The method also may include performing a sole annealing process on the substrate having the one or more magnetoresistive regions formed thereon, wherein the sole annealing process is performed at a first minimum temperature. Subsequent to performing the sole annealing process, the method may include patterning or etching at least a portion of the magnetoresistive stack. Moreover, subsequent to the step of patterning or etching the portion of the magnetoresistive stack, the method may include performing all additional processing on the substrate at a second temperature below the first minimum temperature.
(FR) La présente invention concerne des procédés donnés à titre d'exemple de fabrication d'un dispositif à magnétorésistance. Selon un aspect, un procédé peut consister à former au moins une région (10, 20, 30...) d'un empilement magnéto-résistif (100) sur un substrat (90), le substrat comprenant au moins un dispositif électronique. Le procédé peut également consister à exécuter un processus de recuit unique sur le substrat sur lequel est formée ladite région magnéto-résistive, le processus de recuit unique étant exécuté à une première température minimale. Après l'exécution du processus de recuit unique, le procédé peut consister à graver ou à former des motifs sur au moins une partie de l'empilement magnéto-résistif. De plus, après la gravure ou la formation de motifs sur la partie de l'empilement magnéto-résistif, le procédé peut consister à exécuter tout traitement supplémentaire sur le substrat à une seconde température inférieure à la première température minimale.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)