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1. (WO2018106627) TEMPORAL ATOMIC LAYER DEPOSITION PROCESSING CHAMBER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/106627 International Application No.: PCT/US2017/064598
Publication Date: 14.06.2018 International Filing Date: 05.12.2017
IPC:
H01L 21/67 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants: APPLIED MATERIALS, INC.[US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors: POLYAK, Alexander S.; US
YUDOVSKY, Joseph; US
Agent: BLANKMAN, Jeffrey I.; US
Priority Data:
62/431,81308.12.2016US
Title (EN) TEMPORAL ATOMIC LAYER DEPOSITION PROCESSING CHAMBER
(FR) CHAMBRE DE TRAITEMENT DE DÉPÔT DE COUCHE ATOMIQUE TEMPORELLE
Abstract:
(EN) A dual channel showerhead comprising a first plurality of channels formed in the back surface of the showerhead and extending from a first end to a second end, a second plurality of channels formed through the thickness of the showerhead and extending from a first end to a second end, a first end plenum in fluid connection with the second plurality of channels at the first end and a second end plenum in fluid connection with the second plurality of channels at the second end. Processing chambers including the dual channel showerhead and a blocker ring separating the edge ring from the pumping ring are also discussed.
(FR) Une pomme de douche à double canal comprend une première pluralité de canaux formés dans la surface arrière de la pomme de douche et s'étendant d'une première extrémité à une seconde extrémité, une seconde pluralité de canaux formés à travers l'épaisseur de la pomme de douche et s'étendant d'une première extrémité à une seconde extrémité, un premier plénum d'extrémité en communication fluidique avec la seconde pluralité de canaux au niveau de la première extrémité et un second plénum d'extrémité en communication fluidique avec la seconde pluralité de canaux au niveau de la seconde extrémité. L'invention concerne également des chambres de traitement comprenant la pomme de douche à double canal et une bague d'arrêt séparant la bague de bord de la bague de pompage.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)